STW14NM65N STMicroelectronics, STW14NM65N Datasheet - Page 8
![MOSFET N-CH 650V 12A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STW14NM65N
Manufacturer Part Number
STW14NM65N
Description
MOSFET N-CH 650V 12A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB14NM65N.pdf
(18 pages)
Specifications of STW14NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7032-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
8/18
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
VDSS
STB/F/I/P/W14NM65N
vs temperature