STP20NM60 STMicroelectronics, STP20NM60 Datasheet - Page 17

• Manufacturer Part Number: STP20NM60
• Description: MOSFET N-CH 600V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 192 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3184-5

STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
6
Revision history
Table 9.
18-Dec-2006
27-Aug-2007
17-Feb-2005
25-Oct-2006
26-Jul-2004
Date
Document revision history
Revision
10
11
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8
9
The document has been reformatted
First Release
Insert the TO-247 package
Text updates on
Updated
Figure 2
Table 5.
and
Figure 4
Changes
Revision history
17/18