STP22NM60N STMicroelectronics, STP22NM60N Datasheet - Page 5

• Manufacturer Part Number: STP22NM60N
• Description: MOSFET N-CH 600V 16A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP22NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10306-5

STB/F/I/P/W22NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
t
RRM
RRM
I
t
Q
Q
r(v)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Voltage rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15853 Rev 4
V
R
(see Figure 17)
I
I
V
(see Figure 19)
I
V
(see Figure 19)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 16 A, V
= 16 A, di/dt = 100 A/µs
= 16 A, di/dt = 100 A/µs
= 300 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
J
GS
GS
D
= 150 °C
= 8 A,
= 0
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
26.8
11
18
74
38
296
350
4.7
27
4
Max Unit
1.6
16
64
-
µC
µC
ns
ns
ns
ns
ns
ns
5/23
A
A
V
A
A