STP22NM60N STMicroelectronics, STP22NM60N Datasheet - Page 5

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STP22NM60N

Manufacturer Part Number
STP22NM60N
Description
MOSFET N-CH 600V 16A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP22NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10306-5

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Manufacturer
Quantity
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Quantity:
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Part Number:
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STB/F/I/P/W22NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
t
RRM
RRM
I
t
Q
Q
r(v)
SD
t
t
f(i)
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Voltage rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15853 Rev 4
V
R
(see Figure 17)
I
I
V
(see Figure 19)
I
V
(see Figure 19)
SD
SD
SD
DD
G
DD
DD
= 4.7 Ω, V
= 16 A, V
= 16 A, di/dt = 100 A/µs
= 16 A, di/dt = 100 A/µs
= 300 V, I
= 60 V
= 60 V T
Test conditions
Test conditions
J
GS
GS
D
= 150 °C
= 8 A,
= 0
= 10 V
Electrical characteristics
Min.
Min. Typ. Max Unit
-
-
-
-
-
Typ.
26.8
11
18
74
38
296
350
4.7
27
4
Max Unit
1.6
16
64
-
µC
µC
ns
ns
ns
ns
ns
ns
5/23
A
A
V
A
A

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