STW15NM60ND STMicroelectronics, STW15NM60ND Datasheet - Page 18

• Manufacturer Part Number: STW15NM60ND
• Description: MOSFET N-CH 600V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW15NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 50V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8452-5

Revision history
6
18/19
Revision history
Table 9.
06-Mar-2008
24-Apr-2008
Date
Document revision history
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
Revision
1
2
First release
V
GS
value on
Table 2
changed.
Changes