STW20NM60FD STMicroelectronics, STW20NM60FD Datasheet - Page 14

• Manufacturer Part Number: STW20NM60FD
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW20NM60FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.26ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5415-5; STW20NM60FD

Revision history
5
14/15
Revision history
Table 8.
09-Sep-2004
01-Aug-2006
21-Apr-2006
25-Jul-2006
Date
Revision history
Revision
1
2
3
4
First release
New template
Modified part number
Corrected unit on
STF20NM60D - STP20NM60FD - STW20NM60FD
Table 5.: Dynamic
Changes