STW15NK90Z STMicroelectronics, STW15NK90Z Datasheet - Page 5

• Manufacturer Part Number: STW15NK90Z
• Description: MOSFET N-CH 900V 15A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW15NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 256nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 7.5A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3557-5

STW15NK90Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
osseq
(BR)DSS
g
t
t
increases from 0 to 80% V
I
C
I
C
DS(on)
C
Q
GS(th)
d(on)
d(off)
Q
GSS
DSS
fs
Q
oss eq.
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
(2)
=25°C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
R
(see
V
V
I
V
V
Tc = 125°C
V
V
V
D
DS
DS
GS
DD
DD
GS
DS
DS
GS
DS
GS
G
= 1mA, V
=4.7Ω, V
=0, V
=450 V, I
=720V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating,
= ± 20V
= V
= 10V, I
Figure
Test conditions
Test conditions
GS
DS
, I
D
GS
16)
D
D
D
=0V to 720V
GS
D
= 7.5 A
= 15A
= 150 µA
= 7.5 A
= 7.5A,
= 0
=10V
GS
=0
Min.
Min.
900
Electrical characteristics
3
6100
Typ.
Typ.
3.75
0.40
465
230
135
190
15
96
42
27
35
56
70
oss
Max.
Max.
0.55
256
±
4.5
when V
50
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S
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