IXFV30N50P IXYS, IXFV30N50P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFV30N50P
Manufacturer Part Number
IXFV30N50P
Description
MOSFET N-CH 500V 30A PLUS220
Specifications of IXFV30N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
4150pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
PLUS-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.2
Ciss, Typ, (pf)
4150
Qg, Typ, (nc)
70
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
460
Rthjc, Max, (ºc/w)
0.27
Package Style
PLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
C
GS(th)
DS(on)
d
DSS
(T
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220, PLUS220SMD)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-268
PLUS220, PLUS220SMD
TO-247
S
V
J
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C, unless otherwise specified)
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
= 0 V, I
= ±30 V, V
= V
= 10 V, I
= V
TM
= 0 V
DM
GS
, di/dt ≤ 100 A/µs, V
DSS
HiPerFET
, I
D
D
D
= 250 µA
= 4 mA
= 0.5 I
DS
G
= 5 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
J
= 125° C
≤ V
DSS
IXFH 30N50P
IXFT 30N50P
IXFV 30N50P
IXFV 30N50PS
JM
,
500
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
11 65/2.5 15 N/lb.
Maximum Ratings
165
Typ.
1.13/10 Nm/lb.in
500
500
±30
±40
460
150
300
260
1.2
30
75
30
40
10
4
5
6
Max.
5.0
±100
25
750
200
V/ns
m Ω
nA
µA
µA
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
g
TO-247 AD (IXFH)
TO-268 (IXFT)
PLUS220 SMD(IXFV..S)
Features
l
l
l
Advantages
l
l
l
PLUS220 (IXFV)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DS(on)
DSS
G = Gate
S = Source
G
D
S
G
G
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
= 500
=
S
S
200 mΩ Ω Ω Ω Ω
200 ns
30
D = Drain
TAB = Drain
DS99414E(04/06)
D (TAB)
D (TAB)
D (TAB)
D (TAB)
A
V
Related parts for IXFV30N50P
IXFV30N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.2 ≤ DSS 460 -55 ... +150 150 -55 ...
... Fig. 1. Output Characteristics @ 10V Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25° C, unless otherwise specified 0 pulse test D D25 = MHz 0 0 DSS D D25 = 0 ...
... D25 3 10V GS 3.1 2.8 2.5 2.2 1.9 1.6 1 Amperes D Fig. 7. Input Adm ittance º 125 º º - 3.5 4 4 Volts G S © 2006 IXYS All rights reserved C 3.4 3.1 2.8 2.5 2.2 6V 1.9 1.6 1 0.7 0 º 125 º ...
... V - Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz Volts D S 1.00 0.10 0.01 0.1 IXYS reserves the right to change limits, test conditions, and dimensions. 10 º 0.8 0.9 1 1.1 100 C iss 10 C oss Fig. 13. M axim um Tr ans ie nt The tance 1 10 ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved IXFV 30N50P IXFV 30N50PS Package Outline Drawings TO-268 (IXFT) Outline IXFH 30N50P IXFT 30N50P PLUS220 (IXFV) Outline ...
Related keywords
ixfv36n50p ixfv30n60ps IXFV30N50P datasheet IXFV30N50P data sheet IXFV30N50P pdf datasheet IXFV30N50P component IXFV30N50P part IXFV30N50P distributor IXFV30N50P RoHS IXFV30N50P datasheet download
