STW4N150 STMicroelectronics, STW4N150 Datasheet - Page 6

• Manufacturer Part Number: STW4N150
• Description: MOSFET N-CH 1500V 4A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW4N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohms
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 1.5 KV
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5092-5

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
0.01
(A)
0.1
I
10
D
1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for TO-3PF
Safe operating area for TO-247
1
10
Tj=150°C
Tc=25°C
Sinlge
pulse
100
1000
V
DS
100µs
10µs
1ms
10ms
AM03935v1
Doc ID 11262 Rev 9
(V)
Figure 3.
Figure 5.
Figure 7.
10
10
10
K
-2
-1
-5
0.1
Single pulse
δ=0.5
0.2
Thermal impedance for TO-220
Thermal impedance for TO-3PF
Thermal impedance for TO-247
STFW4N150, STP4N150, STW4N150
10
0.01
-4
10
0.02
-3
0.05
10
-2
10
-1
TO3PF
t (s)