STP25NM60ND STMicroelectronics, STP25NM60ND Datasheet - Page 15

• Manufacturer Part Number: STP25NM60ND
• Description: MOSFET N-CH 600V 21A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP25NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 21 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 40 ns
• Rise Time: 30 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8446-5

STx25NM60ND
Dim.
øR
A1
øP
b1
b2
L1
L2
A
D
E
S
b
e
L
c
19.85
15.45
14.20
Min.
4.85
0.40
3.70
3.55
4.50
2.20
1.0
2.0
3.0
TO-247 Mechanical data
18.50
mm.
5.45
5.50
Typ
Package mechanical data
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
15/18