IRFP460 IXYS, IRFP460 Datasheet - Page 4

• Manufacturer Part Number: IRFP460
• Description: MOSFET N-CH 500V 20A TO-247AD
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IRFP460

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 260W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Forward Transconductance Gfs (max / Min): 21 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 260 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 65 ns
• Rise Time: 81 ns
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 135
• Trr, Typ, (ns): 570
• Pd, (w): 260
• Rthjc, Max, (k/w): 0.45
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFP460IX

© 2000 IXYS All rights reserved
Figure 9. Source Current vs. Source to Drain Voltage
50
40
30
20
10
12
10
0
0.01
8
6
4
2
0
0.2
0.1
0
1
10
-4
V
0.4
DS
I
D
= 400V
= 15A
50
Figure 7. Gate Charge
Gate Charge - nC
T
J
= 125
0.6
V
SD
O
C
- Volts
100
10
0.8
-3
150
T
J
1.0
= 25
O
Figure 11. Transient Thermal Resistance
C
1.2
200
10
Pulse Width - Seconds
-2
Single pulse
100
5000
2500
1000
0.1
10
500
250
100
1
10
Figure10. Forward Bias Safe Operating Area
0
10
-1
T
C
Figure 8. Capacitance Curves
5
= 25
Coss
Ciss
Crss
O
C
V
10
V
DS
DS
- Volts
- Volts
10
100
0
15
f = 1MHz
20
IRFP 460
500
25
0.1ms
10ms
100ms
1ms
DC
10
1
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