STW24NM65N STMicroelectronics, STW24NM65N Datasheet - Page 6

• Manufacturer Part Number: STW24NM65N
• Description: MOSFET N-CH 650V 19A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW24NM65N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 50V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7035-5

Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
V
R
(see Figure 18)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 19 A, V
= 19 A, di/dt = 100 A/µs
= 19 A, di/dt = 100 A/µs
=325 V, I
= 100 V
= 100 V, T
Test conditions
Test conditions
GS
GS
D
J
= 9.5 A
= 10 V
= 0
= 150 °C
Min
Min
Typ
460
620
Typ
30
29
25
10
80
20
7
9
Max
Max Unit
1.3
19
76
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A