IXFH21N50 IXYS, IXFH21N50 Datasheet - Page 4
![MOSFET N-CH 500V 21A TO-247AD](/photos/5/30/53063/to-247ad_sml.jpg)
IXFH21N50
Manufacturer Part Number
IXFH21N50
Description
MOSFET N-CH 500V 21A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH21N50.pdf
(4 pages)
Specifications of IXFH21N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohms
Forward Transconductance Gfs (max / Min)
21 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
21
Rds(on), Max, Tj=25°c, (?)
0.25
Ciss, Typ, (pf)
4200
Qg, Typ, (nc)
135
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH21N50Q
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Fig.7 Gate Charge Characteristic Curve
Fig.9 Capacitance Curves
Fig.11 Transient Thermal Impedance
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
10
9
8
7
6
5
4
3
2
1
0
0
1
0
0
D=0.05
D=0.02
D=0.01
D=0.5
D=0.2
D=0.1
Single pulse
25
V
I
I
D
G
DS
5
= 12.5A
= 10mA
Gate Charge - nCoulombs
= 250V
50
75
0.0001
10
V
f = 1 Mhz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
15
20
0.001
C
C
C
iss
oss
rss
25
IXFH21N50
IXFM21N50
Time - Seconds
0.01
4,835,592
4,850,072
Fig.8 Forward Bias Safe Operating Area
Fig.10 Source Current vs. Source to Drain Voltage
100
0.1
10
50
45
40
35
30
25
20
15
10
1
5
0
4,881,106
4,931,844
0.00
1
Limited by R
0.1
0.25
IXFM24N50
IXFH24N50
IXFT24N50
5,017,508
5,034,796
T
DS(on)
J
0.50
= 125°C
10
V
V
DS
SD
5,049,961
5,063,307
0.75
- Volts
- Volt
1
T
J
= 25°C
1.00
5,187,117
5,237,481
100
IXFM26N50
IXFH26N50
IXFT26N50
1.25
5,486,715
5,381,025
1.50
500
10
10µs
100µs
1ms
10ms
100ms