STP30NM60ND STMicroelectronics, STP30NM60ND Datasheet - Page 8

• Manufacturer Part Number: STP30NM60ND
• Description: MOSFET N-CH 600V 25A TO-220
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STP30NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 50V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8448-5

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
V
SD
V
1.05
0.95
0.85
0.75
0.8
0.6
0.4
0.2
(norm)
1.1
0.9
0.8
0.7
GS(th)
1
0
(V)
1
-50
0
T
J
=-50°C
-25
vs temperature
characteristics
0
10
25
50
I
D
=250µA
75
20
100
125
AM00043v1
150°C
AM00050v1
T
25°C
150
J
I
(°C)
SD
(A)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
BV
1.07
1.05
1.03
1.01
0.99
0.97
0.95
0.93
R
(norm)
(norm)
DS(on)
DSS
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
-50
-25
-25
temperature
0
0
25
25
50
50
VDSS
75
75
vs temperature
100
100
STx30NM60ND
125
AM00047v1
125
AM00049v1
T
150
T
J
(°C)
150
J
(°C)