IXFH24N50 IXYS, IXFH24N50 Datasheet - Page 3

• Manufacturer Part Number: IXFH24N50
• Description: MOSFET N-CH 500V 24A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH24N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.23
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 135
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 1999 IXYS All rights reserved
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
45
40
35
30
25
20
15
10
30
25
20
15
10
5
0
5
0
-50
0
0
T
T
26N50
24N50
21N50
J
5
J
-25
= 25°C
= 25°C
Fig. 1 Output Characteristics
5
Fig. 3 R
Fig. 5 Drain Current vs.
Case Temperature
10 15 20 25 30 35 40 45 50
V
0
GS
10
= 10V
T
DS(on)
25
I
C
7V
D
V
- Degrees C
15
V
- Amperes
DS
GS
vs. Drain Current
50
- Volts
= 10V
20
75
V
GS
= 15V
25
100 125 150
6V
30
5V
35
IXFH21N50
IXFM21N50
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
45
40
35
30
25
20
15
10
5
0
-50
-50
0
1
-25
-25
T
V
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
J
V
DS
of Drain to Source Resistance
= 25°C
GS(th)
= 10V
2
0
0
IXFM24N50
IXFH24N50
IXFT24N50
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
= 12A
- Volts
50
50
5
6
75
75
7
100 125 150
100 125 150
BV
8
DSS
IXFM26N50
IXFH26N50
IXFT26N50
9
10