IXFH26N50Q IXYS, IXFH26N50Q Datasheet - Page 2

MOSFET N-CH 500V 26A TO-247AD

IXFH26N50Q

Manufacturer Part Number
IXFH26N50Q
Description
MOSFET N-CH 500V 26A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH26N50Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
24 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
26 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.20
Ciss, Typ, (pf)
3900
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
250
Rthjc, Max, (ºc/w)
0.50
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH26N50Q
Manufacturer:
IXYS
Quantity:
6 500
Part Number:
IXFH26N50Q
Manufacturer:
IXFH
Quantity:
5 510
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1. Pulse width limited by T
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
thJC
thCK
SD
RM
g(on)
gs
gd
2. Pulse test, t
Test Conditions
V
(TO-247)
Test Conditions
V
Repetitive; Note1
I
Pulse test, t
F
DS
GS
= I
I
S
= 0 V
F
= 10 V; I
V
V
R
V
, V
300 s, duty cycle d
GS
GS
GS
= I
G
= 2
GS
S
, -di/dt = 100 A/ s, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
(External),
300 s, duty cycle d
JM
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, Note 2
2 %
24N50Q
26N50Q
24N50Q
26N50Q
(T
(T
DSS
DSS
J
J
R
= 25 C, unless otherwise specified)
, I
, I
= 25 C, unless otherwise specified)
= 100 V
D
D
= 0.5 • I
= 0.5 • I
2 %
D25
D25
min.
min.
14
Characteristic Values
Characteristic Values
4,835,592
4,850,072
3900
0.85
0.25
typ.
typ.
500
130
24
28
30
55
16
95
27
40
8
4,881,106
4,931,844
0.42
max.
max.
250
104
1.3
24
26
96
5,017,508
5,034,796
K/W
K/W
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
S
A
A
A
A
A
C
V
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
TO-247 AD Outline
5,049,961
5,063,307
TO-268 Outline
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
1
2
1
2
2
1
2
1
P
1
2
20.80
15.75
19.81
13.80
15.85
18.70
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5,187,117
5,237,481
3
4.7
2.2
2.2
1.0
Millimeter
4.9
2.7
.02
1.9
Millimeter
5.45 BSC
.4
0.25 BSC
.4
21.46
16.26
20.32
14.00
16.05
19.10
Max.
2.13
3.12
3.65
5.49
Max.
2.54
5.72
4.50
6.40
1.45
13.6
2.70
1.40
1.15
4.10
5.3
2.6
1.4
5.1
2.9
.25
2.1
.65
.8
5,486,715
5,381,025
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min.
242 BSC
.75
Inches
Inches
.215 BSC
.010 BSC
Max.
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
.551
.632
.752
.201
.114
.010
.057
.026
.535
.106
.055
.045
.161
6,306,728B1
.83

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