STP42N65M5 STMicroelectronics, STP42N65M5 Datasheet - Page 5

MOSFET N-CH 650V 33A TO-220

STP42N65M5

Manufacturer Part Number
STP42N65M5
Description
MOSFET N-CH 650V 33A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STP42N65M5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
79 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4650pF @ 100V
Power - Max
190W
Mounting Type
Through Hole
Package / Case
TO-220
Transistor Polarity
N Channel
Continuous Drain Current Id
33A
Drain Source Voltage Vds
710V
On Resistance Rds(on)
0.07ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.079 Ohm @ 10 V
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
33 A
Power Dissipation
190000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8791-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP42N65M5
Manufacturer:
MICRON
Quantity:
3 305
STx42N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15317 Rev 3
V
R
(see
DD
G
= 4.7 Ω, V
= 400 V, I
Figure
I
I
V
I
V
(see
SD
SD
SD
Test conditions
DD
DD
= 33 A, V
= 33 A, di/dt = 100 A/µs
= 33 A, di/dt = 100 A/µs
= 100 V (see
= 100 V, T
Figure
19)
Test conditions
GS
D
= 20 A,
= 10 V
24)
GS
j
= 150 °C
= 0
Figure
24)
Min.
Electrical characteristics
-
Min.
-
-
-
-
Typ.
61
24
65
13
Typ. Max. Unit
400
532
35
10
38
7
Max
132
1.5
33
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/18

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