IXFX160N30T IXYS, IXFX160N30T Datasheet - Page 4

• Manufacturer Part Number: IXFX160N30T
• Description: MOSFET N-CH 160A 300V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX160N30T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 335nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1390W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.019
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 335
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1390
• Rthjc, Max, (k/w): 0.09
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
350
300
250
200
150
100
200
180
160
140
120
100
80
60
40
20
50
0
0
0.0
3.0
0
f
= 1 MHz
3.4
5
0.2
Fig. 9. Forward Voltage Drop of
3.8
10
Fig. 7. Input Admittance
0.4
Fig. 11. Capacitance
Intrinsic Diode
4.2
15
T
V
V
J
SD
DS
0.6
V
= 125ºC
GS
- Volts
- Volts
T
J
4.6
20
- Volts
= 125ºC
- 40ºC
25ºC
0.8
5.0
25
C iss
C oss
C rss
T
J
1.0
= 25ºC
5.4
30
1.2
5.8
35
6.2
1.4
40
1,000
300
250
200
150
100
100
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
Fig. 12. Forward-Bias Safe Operating Area
T
T
Single Pulse
V
I
I
J
C
20
R
D
G
= 150ºC
DS
DS(
= 25ºC
= 80A
= 10mA
50
= 150V
on
)
40
Limit
Fig. 8. Transconductance
100
60
Fig. 10. Gate Charge
10
Q
I
D
G
80
- Amperes
150
- NanoCoulombs
V
DS
100
- Volts
200
T
120
J
IXFK160N30T
= - 40ºC
IXFX160N30T
100
140
25ºC
125ºC
250
1ms
160
IXYS REF: F_160N30T(9E)3-23-09
300
25µs
100µs
180
1000
350
200