IXFX180N25T IXYS, IXFX180N25T Datasheet - Page 3

• Manufacturer Part Number: IXFX180N25T
• Description: MOSFET N-CH 180A 250V PLUS247
• Manufacturer: IXYS
• Series: GigaMOS™r

Specifications of IXFX180N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 345nC @ 10V
• Input Capacitance (ciss) @ Vds: 28000pF @ 25V
• Power - Max: 1390W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0129
• Ciss, Typ, (pf): 28000
• Qg, Typ, (nc): 345
• Trr, Typ, (ns): -
• Trr, Max, (ns): -
• Pd, (w): 1390
• Rthjc, Max, (k/w): 0.09
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All rights reserved
180
160
140
120
100
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
0
0
0.0
0.0
0
Fig. 5. R
0.4
V
0.2
GS
50
= 10V
0.8
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.6
1.2
100
vs. Drain Current
1.6
0.8
Normalized to I
I
D
150
V
V
@ 25ºC
@ 125ºC
- Amperes
2.0
1.0
DS
DS
- Volts
- Volts
2.4
1.2
V
200
GS
V
= 10V
GS
1.4
2.8
6V
5V
8V
7V
= 10V
D
250
7V
1.6
3.2
= 90A Value
6V
5V
T
T
J
J
= 125ºC
= 25ºC
1.8
3.6
300
2.0
4.0
350
2.2
4.4
350
300
250
200
150
100
180
160
140
120
100
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
-50
-50
0
V
Fig. 4. R
GS
V
External Lead Current Limit
Fig. 2. Extended Output Characteristics
GS
= 10V
2
-25
-25
= 10V
Fig. 6. Maximum Drain Current vs.
4
DS(on)
vs. Junction Temperature
7V
6V
5V
0
0
T
C
T
Case Temperature
- Degrees Centigrade
6
J
Normalized to I
25
- Degrees Centigrade
25
V
@ 25ºC
DS
8
50
50
- Volts
10
I
D
75
75
= 180A
IXFK180N25T
IXFX180N25T
12
D
= 90A Value
100
100
14
I
D
= 90A
125
125
16
150
150
18