IXFH32N50 IXYS, IXFH32N50 Datasheet - Page 3

MOSFET N-CH 500V 32A TO-247AD

IXFH32N50

Manufacturer Part Number
IXFH32N50
Description
MOSFET N-CH 500V 32A TO-247AD
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH32N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
5700pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Forward Transconductance Gfs (max / Min)
28 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
32 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
5200
Qg, Typ, (nc)
227
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH32N50
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXFH32N50
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH32N50
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFH32N50Q
Manufacturer:
RENESAS
Quantity:
50 000
© 2000 IXYS All rights reserved
2.8
2.4
2.0
1.6
1.2
0.8
80
70
60
50
40
30
20
10
40
32
24
16
0
8
0
-50
0
0
Figure 3. R
Figure 1. Output Characteristics at 25
Figure 5. Drain Current vs. Case Temperature
V
-25
T
GS
J
10
= 25
= 10V
4
IXFH30N50
O
C
0
DS(on)
20
T
I
D
25
C
Tj=125
V
8
- Amperes
- Degrees C
DS
normalized to 15A/25
V
GS
30
- Volts
=10V
50
0
C
9V
8V
7V
IXFH32N50
12
Tj=25
75
40
0
100 125 150
C
16
50
6V
5V
60
O
20
O
C vs. I
C
D
2.8
2.4
2.0
1.6
1.2
0.8
50
40
30
20
10
60
50
40
30
20
10
0
0
25
0
0
Figure 6. Admittance Curves
Figure 2. Output Characteristics at 125
Figure 4. R
V
T
GS
J
IXFH 30N50
IXFT 30N50
= 125
= 10V
4
50
2
O
C
DS(on)
T
T
J
J
V
V
75
8
= 125
- Degrees C
GS
DS
normalized to 15A/25
I
D
- Volts
- Volts
= 32A
4
o
C
100
12
V
T
GS
I
J
D
=10V
= 25
= 16A
IXFH 32N50
IXFT 32N50
9V
8V
7V
6
o
125
C
16
5V
6V
150
20
8
O
C vs. T
O
C
3 - 4
J

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