STW55NM60ND STMicroelectronics, STW55NM60ND Datasheet - Page 3

• Manufacturer Part Number: STW55NM60ND
• Description: MOSFET N-CH 600V 51A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW55NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 50V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.047ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 51 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7036-5

STW55NM60ND
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2.
Table 3.
Table 4.
Symbol
R
Symbol
R
Symbol
dv/dt
I
thj-case
thj-amb
I
E
DM
P
SD
I
V
V
T
T
AS
AS
I
I
TOT
T
DS
GS
stg
D
D
l
j
(1)
(2)
≤ 51 A, di/dt ≤ 600 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Avalanche characteristics
j
= 25 °C, I
Parameter
Parameter
Parameter
DD
D
C
= 80% V
= I
= 25 °C
GS
AS
, V
= 0)
(BR)DSS
DD
C
C
= 50 V)
= 25 °C
= 100 °C
j
max)
Max value
–55 to 150
Value
Value
0.36
850
300
600
±25
204
350
150
15
50
51
32
40
Electrical ratings
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
°C
°C
W
A
V
V
A
A
A
3/12