IXTM21N50 IXYS, IXTM21N50 Datasheet - Page 3

• Manufacturer Part Number: IXTM21N50
• Description: MOSFET N-CH 500V 21A TO-204AE
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTM21N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 300W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 21
• Rds(on), Max, Tj=25°c, (?): 0.25
• Ciss, Typ, (pf): 4200
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 600
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-204
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2438991

© 2000 IXYS All rights reserved
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
50
45
40
35
30
25
20
15
10
30
20
10
5
0
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
T
J
5
J
-25
= 25°C
= 25°C
5
10 15 20 25 30 35 40 45 50
Case Temperature
24N50
21N50
DS(on)
0
10
T
V
25
vs. Drain Current
I
GS
C
D
V
- Degrees C
15
= 10V
V
- Amperes
DS
GS
- Volts
50
= 10V
20
75
V
GS
7V
= 15V
25
100 125 150
6V
30
5V
35
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
45
40
35
30
25
20
15
10
5
0
-50
-50
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
0
IXTH 21N50
IXTM 21N50
1
-25
-25
V
GS(th)
of Drain to Source Resistance
Breakdown and Threshold Voltage
2
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
I
- Degrees C
- Degrees C
D
GS
= 12A
50
50
- Volts
5
6
75
75
IXTH 24N50
IXTM 24N50
7
100 125 150
100 125 150
BV
8
CES
9
10
3 - 4