STY60NM50 STMicroelectronics, STY60NM50 Datasheet
STY60NM50
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STY60NM50 Summary of contents
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... November 2003 N-CHANNEL 500V - 0.045 - 60A Max247 Zener-Protected MDmesh™Power MOSFET R I DS(on) D < 0. Parameter = 25° 100° 25°C C (1)I SD STY60NM50 Max247 INTERNAL SCHEMATIC DIAGRAM Value 500 500 ±30 60 37.8 240 560 6 4.5 15 –65 to 150 150 60A, di/dt 400A/µ ...
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... STY60NM50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ...
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... Figure 5) Test Conditions I = 60A 60A, di/dt = 100A/µ 100 25° (see test circuit, Figure 60A, di/dt = 100A/µ 100 150° (see test circuit, Figure 5) Thermal Impedance STY60NM50 Min. Typ. Max. Unit 190 266 Min. Typ. Max. Unit 108 ns Min ...
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... STY60NM50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STY60NM50 5/8 ...
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... STY60NM50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... Max247 MECHANICAL DATA mm DIM. MIN. TYP. A 4.70 A1 2.20 b 1.00 b1 2.00 b2 3.00 c 0.40 D 19.70 e 5.35 E 15.30 L 14.20 L1 3.70 inch MAX. MIN. TYP. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 STY60NM50 MAX. P025Q 7/8 ...
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... STY60NM50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...