NTE4153NT1G ON Semiconductor, NTE4153NT1G Datasheet - Page 4
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NTE4153NT1G
Manufacturer Part Number
NTE4153NT1G
Description
MOSFET N-CH 20V 915MA SC-89
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheet
1.NTE4153NT1G.pdf
(6 pages)
Specifications of NTE4153NT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
230 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
915mA
Vgs(th) (max) @ Id
1.1V @ 250µA
Gate Charge (qg) @ Vgs
1.82nC @ 4.5V
Input Capacitance (ciss) @ Vds
110pF @ 16V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.4 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.915 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.23Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±6V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTE4153NT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE4153NT1G
Manufacturer:
ON
Quantity:
93 000
Company:
Part Number:
NTE4153NT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NTE4153NT1G
Manufacturer:
ON
Quantity:
3 480
Part Number:
NTE4153NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
5
4
3
2
1
0
0.001
0
0.01
1.0
0.1
Q
Figure 7. Gate−to−Source Voltage vs. Total
GS
0.00001
0.05
0.01
D = 0.5
0.1
0.02
0.2
SINGLE PULSE
0.4
Q
Q
GD
G
, TOTAL GATE CHARGE (nC)
0.0001
0.8
Gate Charge
Q
T
1.2
TYPICAL ELECTRICAL CHARACTERISTICS
0.001
Figure 9. Normalized Thermal Response
I
T
D
A
= 0.2 A
1.6
= 25°C
NTA4153N, NTE4153N
0.01
http://onsemi.com
2.0
t, TIME (s)
4
0.1
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Figure 8. Diode Forward Voltage vs. Current
V
V
GS
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.0
0.2
10
0.4
T
J
= 125°C
100
0.6
T
J
= 25°C
1000
0.8