NTK3139PT1G ON Semiconductor, NTK3139PT1G Datasheet - Page 3

• Manufacturer Part Number: NTK3139PT1G
• Description: MOSFET P-CH 20V 660MA SOT-723
• Manufacturer: ON Semiconductor

Specifications of NTK3139PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 170pF @ 16V
• Power - Max: 310mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.2 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.78 A
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTK3139PT1G; NTK3139PT1GOSTR

2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.0
0.8
0.6
0.4
0.2
0
0
−60
0
1
V
Figure 3. On−Resistance vs. Gate−to−Source
GS
0.5
1.5
−35
Figure 5. On−Resistance Variation with
= −2.5 V, I
Figure 1. On−Region Characteristics
−V
1
DS
T
2
−10
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1.5
−V
2.5
D
V
GS
= −550 mA
GS
V
2
15
GS
, GATE VOLTAGE (V)
Temperature
T
= −1.5 V, I
J
3
2.5
= −4.5 V to −2.5 V
V
= 25°C
Voltage
V
GS
GS
40
3.5
3
= −1.8 V, I
= −4.5 V, I
D
3.5
65
= −100 mA
4
4
D
4.5
D
90
= −100 mA
TYPICAL CHARACTERISTICS
= −630 mA
4.5
I
D
T
= −0.78 A
J
5
115
= 25°C
5
−2.2 V
−1.8 V
−1.6 V
−1.4 V
−2.0 V
−1.5 V
http://onsemi.com
5.5
5.5
140
NTK3139P
6
6
3
10,000
1000
100
1.8
1.5
1.2
0.9
0.6
0.3
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
0
0.75
0.4
5.0
Figure 4. On−Resistance vs. Drain Current and
V
Figure 6. Drain−to−Source Leakage Current
V
T
GS
DS
J
= 25°C
−V
−V
= 0 V
≥ −5 V
0.7
Figure 2. Transfer Characteristics
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
−I
1.25
T
T
D
J
0.9
10
J
, DRAIN CURRENT (A)
= 125°C
= 25°C
Gate Voltage
vs. Voltage
T
T
J
J
= 125°C
= 150°C
T
1.2
J
= −55°C
1.75
1.4
15
V
V
GS
GS
= −2.5 V
= −4.5 V
1.7
2.25
1.9
20