NTS2101PT1G ON Semiconductor, NTS2101PT1G Datasheet - Page 4

• Manufacturer Part Number: NTS2101PT1G
• Description: MOSFET P-CH 8V 1.4A SOT-323
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTS2101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 640pF @ 8V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 290 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Dc: 05+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTS2101PT1GOSTR

5
4
3
2
1
0
0
Figure 7. Gate−to−Source and Drain−to−Source
Q
GS
Q
Voltage vs. Total Gate Charge
Q
GD
2.0
G
, TOTAL GATE CHARGE (nC)
Q
T
4.0
TYPICAL ELECTRICAL CHARACTERISTICS
V
I
T
6.0
D
A
DS
= −1.0 A
= 25°C
= −5.0 A
http://onsemi.com
8.0
NTS2101P
4
4.0
3.0
2.0
1.0
0
0
Figure 8. Diode Forward Voltage vs. Current
V
−V
GS
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
0.4
T
J
= 125°C
0.6
T
J
0.8
= 25°C
1.0