FDN335N Fairchild Semiconductor, FDN335N Datasheet
FDN335N
Manufacturer Part Number
FDN335N
Description
MOSFET N-CH 20V 1.7A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN335N.pdf
(5 pages)
Specifications of FDN335N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
310pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.7 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN335NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN335N
Manufacturer:
FSC
Quantity:
300 000
Company:
Part Number:
FDN335N
Manufacturer:
Fairchild Semiconductor
Quantity:
158 229
Part Number:
FDN335N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN335N-NL
Manufacturer:
ELM
Quantity:
20 000
Part Number:
FDN335N-NL/335
Manufacturer:
ELM
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
FDN335N
N-Channel 2.5V Specified PowerTrench
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
•
•
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Symbol
D
Package Outlines and Ordering Information
DC/DC converter
J
DSS
GSS
D
Load switch
, T
JA
JC
stg
Device Marking
SuperSOT -3
335
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
TM
- Continuous
- Pulsed
G
Parameter
FDN335N
Device
S
T
A
= 25°C unless otherwise noted
Reel Size
TM
Features
•
•
•
•
7’’
1.7 A, 20 V. R
Low gate charge (3.5nC typical).
High performance trench technology for extremely
low R
High power and current handling capability.
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
MOSFET
DS(ON)
.
R
DS(ON)
DS(ON)
G
Tape Width
= 0.07
= 0.100
8mm
-55 to +150
Ratings
D
0.46
250
1.7
0.5
20
75
8
8
@ V
@ V
S
GS
GS
= 4.5 V
= 2.5 V.
Quantity
3000 units
April 1999
Units
FDN335N Rev. C
C/W
C/W
W
V
V
A
C
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Datasheet:
FDN335N Summary of contents
Page 1
... A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Device Reel Size FDN335N 7’’ April 1999 = 0. 4.5 V DS(ON 0.100 @ V = 2.5 V. DS(ON Ratings Units 1 0.5 W 0.46 -55 to +150 250 C/W C/W 75 Tape Width Quantity 8mm 3000 units FDN335N Rev ...
Page 2
... GEN 1 4 0.42 A (Note determined by the user's board design 270 C/W when mounted on a minimum pad. 2.0% Min Typ Max Units mV 100 nA -100 nA 0.4 0.9 1 mV/ C 0.055 0.070 0.079 0.120 0.078 0.100 310 8 3 0.55 nC 0.95 nC 0.42 A 0.7 1.2 V FDN335N Rev. C ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 0.85A 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDN335N Rev 1.4 ...
Page 4
... Transient themal response will change depending on the circuit board design 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE o R =270 C = 0.01 0 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 270 °C/W JA P(pk ( Duty Cycle 100 300 FDN335N Rev ...
Page 5
TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...