BS170G ON Semiconductor, BS170G Datasheet
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BS170G
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BS170G Summary of contents
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... BS170G Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (t ≤ 50 ms) p Drain Current (Note) Total Device Dissipation @ T = 25°C A Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device ...
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... Adc) See Figure Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device BS170G BS170RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...
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V in PULSE GENERATOR 1.0 MW Figure 1. Switching Test Circuit 2.0 1.6 1.2 0.8 0 JUNCTION TEMPERATURE (°C) J Figure 3. V Normalized versus Temperature GS(th) 2.0 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...