SI1032R-T1-E3 Vishay, SI1032R-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1032R-T1-E3
• Description: MOSFET N-CH 20V 140MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1032R-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 140mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1032R-T1-E3TR

SC-75A: 3-LEADS
Notes
1. Dimension D does not include mold flash, protrusions or gate
2. Dimensions D and E1 are determined at the outmost extremes of
3. Datums A, B and D to be determined 0.10 mm from the lead tip.
4. Terminal positions are shown for reference only.
5. These dimensions apply to the flat section of the lead between
Revision: 08-Aug-11
Dimensions in millimeters will govern.
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interelead flash, but including any mismatch between the top
and bottom of the plastic body.
0.08 mm and 0.15 mm from the lead tip.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
DIMENSIONS
bbb
ddd
aaa
ccc
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Seating Plane
2
1
ddd
bbb
2X
E1
3
M
C
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4X
C
4
bbb
2XB1
A –
C
D
3
B
D
1
B1(b1)
e1
TOLERANCES
e2
D
3
0.10
0.10
0.10
0.10
1
2
e3
2
2X
bbb
1
E/2
D
ECN: E11-2210-Rev. D, 08-Aug-11
DWG: 5868
D
E
DIM.
2X
3
A
A
B
b
E
e
e
e
L
L

c
A
D
E
c
L

1
1
1
2
3
1
2
1
1
2
1
1
bbb
C
With Tin Planting
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Base Metal
MIN.
0.00
0.65
0.19
0.17
0.13
0.10
1.48
1.50
0.66
0.15
0°
4°
-
1
Package Information
MILLIMETERS
0.50 BSC
1.00 BSC
0.50 BSC
0.15 BSC
0.40 REF
Section B-B
NOM.
1.575
0.205
B1
b1
0.70
1.60
0.76
-
-
-
-
-
-
-
-
L2
c1
5
Vishay Siliconix
Document Number: 71348
1
MAX.
0.80
0.10
0.80
0.24
0.21
0.15
0.12
1.68
1.70
0.86
0.30
10°
8°
NOTE
1, 2
1, 2
5
5
5