SI1013X-T1-E3 Vishay, SI1013X-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1013X-T1-E3
• Description: MOSFET P-CH 20V 350MA SC89-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1013X-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -350mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1013X-T1-E3TR

TYPICAL CHARACTERISTICS (T
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
1000
4.0
3.2
2.4
1.6
0.8
0.0
100
10
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
0.2
DS
Surge-Drain Diode Forward Voltage
= 250 mA
0.2
On-Resistance vs. Drain Current
= 10 V
200
T
J
V
= 25 °C
0.4
SD
Q
0.4
V
T
g
- Source-to-Drain Voltage (V)
GS
I
J
D
- Total Gate Charge (nC)
= 125 °C
V
- Drain Current (mA)
0.6
= 1.8 V
GS
400
Gate Charge
0.6
= 2.5 V
0.8
0.8
600
T
1.0
J
= - 55 °C
V
A
GS
1.0
= 25 °C, unless otherwise noted)
1.2
= 4.5 V
800
1.2
1.4
1000
1.6
1.4
120
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
5
4
3
2
1
0
0
- 50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
C
= 200 mA
rss
- 25
1
4
V
V
T
DS
GS
C
J
0
os s
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
is s
2
Capacitance
8
25
I
Vishay Siliconix
3
D
V
I
D
= 350 mA
GS
50
= 350 mA
12
= 4.5 V
Si1013R/X
4
75
www.vishay.com
V
I
D
GS
= 150 mA
16
= 1.8 V
100
5
125
20
6
3