DMG1012T-7 Diodes Inc, DMG1012T-7 Datasheet - Page 4

• Manufacturer Part Number: DMG1012T-7
• Description: IC MOSFET N-CHAN SOT-523
• Manufacturer: Diodes Inc

Specifications of DMG1012T-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 630mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.74nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60.67pF @ 16V
• Power - Max: 280mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 20 V
• Continuous Drain Current: 0.63 A
• Power Dissipation: 0.28 W
• Maximum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG1012T-7; DMG1012T-7DITR; Q4768583

Ordering Information
Marking Information
Notes:
Date Code Key
DMG1012T
Document number: DS31783 Rev. 3 - 2
Month
Code
Code
Year
100
10
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
1
0
Part Number
DMG1012T-7
0.001
0.01
V , DRAIN-SOURCE VOLTAGE (V)
0.00001
0.1
DS
Jan
1
1
5
2009
Fig. 9 Typical Capacitance
D = 0.01
D = 0.05
D = Single Pulse
D = 0.02
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.005
W
Feb
0.0001
(Note 5)
2
C
C
C
rss
10
oss
iss
2010
Mar
3
X
0.001
15
NA1
Apr
4
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.01
YM
2011
20
Y
www.diodes.com
May
5
D = 0.9
SOT-523
Case
4 of 6
NA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
0.1
Jun
6
2012
Z
1,000
100
10
1
Jul
7
1
0
Fig. 10 Typical Drain-Source Leakage Current
V , DRAIN-SOURCE VOLTAGE (V)
Aug
DS
P(pk)
8
4
2013
10
T - T = P * R
Duty Cycle, D = t /t
A
R
J
R
θJA
vs. Drain-Source Voltage
θ
JA
t
(t) = r(t) *
A
1
t
= 486°C/W
2
Sep
8
9
θ
R
100
JA
3000/Tape & Reel
1 2
θ
JA
(t)
Packaging
T = 85°C
T = 25°C
2014
T = 125°C
A
A
T = 150°C
A
12
Oct
B
A
O
1,000
DMG1012T
16
Nov
N
© Diodes Incorporated
October 2009
2015
C
20
Dec
D