VN2222LLG ON Semiconductor, VN2222LLG Datasheet - Page 2

• Manufacturer Part Number: VN2222LLG
• Description: MOSFET N-CH 60V 150MA TO-92
• Manufacturer: ON Semiconductor

Specifications of VN2222LLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 400mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.15 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 150 mA
• Package Type: TO-92
• Polarization: N-Channel
• Resistance, Drain To Source On: 7.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 100 Micromhos
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: VN2222LLGOS

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 1)
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
VN2222LLG
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current, Forward
Gate Threshold Voltage
Static Drain−Source On−Resistance
Drain−Source On−Voltage
On−State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Turn−Off Delay Time
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GSF
DS
GS
GS
GS
GS
GS
DS
= 0, I
= 48 Vdc, V
= 48 Vdc, V
= V
= 10 Vdc, I
= 10 Vdc, I
= 5.0 Vdc, I
= 10 Vdc, I
= 10 Vdc, V
= 10 Vdc, I
= 30 Vdc, V
GS
D
, I
= 100 mAdc)
D
= 1.0 mAdc)
D
D
D
D
D
GS
GS
DS
Device
= 0.5 Adc)
= 0.5 Vdc, T
= 500 mAdc)
= 500 mAdc)
DS
= 200 mAdc)
= 0)
= 0, T
≥ 2.0 V
= 0)
J
DS(on)
= 125°C)
C
= 125°C)
)
Characteristic
(T
C
= 25°C unless otherwise noted)
(V
http://onsemi.com
(V
DD
R
gen
DS
= 15 Vdc, I
= 25 W, R
= 25 Vdc, V
f = 1.0 MHz)
(Pb−Free)
Package
TO−92
2
D
L
= 600 mA,
= 23 W)
GS
= 0,
V
Symbol
V
V
r
(BR)DSS
I
DS(on)
I
I
GSSF
DS(on)
C
D(on)
C
GS(th)
C
DSS
g
t
t
oss
on
off
iss
rss
fs
1000 Unit / Box
Min
750
100
Shipping
0.6
60
−
−
−
−
−
−
−
−
−
−
−
−
−100
†
Max
13.5
3.75
500
2.5
7.5
1.5
5.0
10
60
25
10
10
−
−
−
mmhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
mA
pF
ns
W