FDZ391P Fairchild Semiconductor, FDZ391P Datasheet - Page 2

• Manufacturer Part Number: FDZ391P
• Description: MOSFET P-CH 20V 3A 6-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ391P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1065pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single Dual Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ391PTR

FDZ391P Rev.B1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
BV
∆BV
I
I
V
r
I
g
C
C
C
R
t
t
t
t
Q
Q
Q
I
V
t
Q
∆V
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
∆T
∆T
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
On to State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
a. 65 °C/W when mounted on
a 1 in
2
pad of 2 oz copper.
I
I
V
V
V
I
V
V
V
V
V
V
V
f = 1 MHz
f = 1 MHz
V
V
V
V
V
I
D
D
D
I
F
D
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DD
GS
GS
DD
GS
= -250 µA, V
= -250 µA, referenced to 25 °C
= -250 µA, referenced to 25 °C
= -1 A, di/dt = 100 A/µs
= -1 A
= -16 V, V
= -5 V, I
= -10 V, V
= -4.5 V
= ±8 V, V
= V
= -4.5 V, I
= -2.5 V, I
= -1.5 V, I
= -4.5 V, I
= -4.5 V, V
= -10 V, I
= -4.5 V, R
= -10 V
= 0 V, I
DS
2
Test Conditions
, I
S
D
D
D
= -1.1 A
DS
GS
D
D
= -1 A
GS
= -250 µA
GS
D
D
GEN
= -1 A
DS
= -1 A
= -1 A T
= 0 V
= -1 A
= -1 A
= 0 V,
= 0 V
= 0 V
= - 5 V
= 6 Ω
J
(Note 2)
= 125 °C
θJC
is guaranteed by design while R
-0.4
Min
-10
-20
b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
155
-0.7
800
-0.6
140
100
Typ
90
21
10
50
30
11
-12
74
90
9
5
9
1
2
2
7
1065
θCA
±100
-1.1
-1.2
Max
205
135
-1.5
123
200
123
20
20
80
48
13
85
www.fairchildsemi.com
-1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
Ω
A
V
V
V
A
S