NTHS5404T1G ON Semiconductor, NTHS5404T1G Datasheet
NTHS5404T1G
Specifications of NTHS5404T1G
NTHS5404T1GOS
NTHS5404T1GOSTR
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NTHS5404T1G Summary of contents
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... M = Month Code ORDERING INFORMATION Device Package Shipping NTHS5404T1 ChipFET 3000/Tape & Reel NTHS5404T1G ChipFET 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: ...
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THERMAL CHARACTERISTICS Characteristic Maximum Junction−to−Ambient (Note sec Steady State Maximum Junction−to−Foot (Drain) Steady State ELECTRICAL CHARACTERISTICS Characteristic Static Gate Threshold Voltage Gate−Body Leakage Zero Gate Voltage Drain Current On−State Drain Current (Note 3) Drain−Source On−State Resistance ...
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TYPICAL ELECTRICAL CHARACTERISTICS 12 1 − 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.06 ...
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TYPICAL ELECTRICAL CHARACTERISTICS iss 1800 1500 C 1200 rss 900 600 C 300 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure ...
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... Figure 12. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 12. This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads ...
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... J 0.05 (0.002) N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...