FDS8449 Fairchild Semiconductor, FDS8449 Datasheet - Page 5

• Manufacturer Part Number: FDS8449
• Description: MOSFET N-CH 40V 7.6A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8449

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 7.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 7.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.6 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.029Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8449TR

Typical Characteristics
FDS8449 Rev A(W)
0.001
0.01
0.1
0.0001
1
D = 0.5
0.2
0.05
0.1
0.02
0.01
SINGLE PULSE
0.001
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
Figure 25. Transient Thermal Response Curve.
0.01
0.1
t
1
, TIME (sec)
1
10
P(pk)
Duty Cycle, D = t
T
R
J
R
θ JA
- T
θ JA
(t) = r(t) * R
A
= 125
t
100
1
= P * R
t
2
o
C/W
θ JA
www.fairchildsemi.com
θ JA
1
(t)
/ t
2
1000