FDMA520PZ Fairchild Semiconductor, FDMA520PZ Datasheet - Page 4
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FDMA520PZ
Manufacturer Part Number
FDMA520PZ
Description
MOSFET P-CH 20V 7.3A MLP2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMA520PZ.pdf
(6 pages)
Specifications of FDMA520PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1645pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Transistor Polarity
P Channel
Continuous Drain Current Id
7.3A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-1.1V
Rohs Compliant
Yes
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
30 mOhms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
7.3 A
Power Dissipation
2.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA520PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMA520PZ
Manufacturer:
FSC
Quantity:
12 400
Part Number:
FDMA520PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMA520PZ Rev.B2
Typical Characteristics
Figure 9.
1E-4
1E-5
1E-6
1E-7
1E-8
1E-9
150
120
Figure 7.
90
60
30
10
10
0
8
6
4
2
0
Figure 11.
0
0
-4
V
I
D
GS
= -7.3A
10
T
Gate Leakage Current vs Gate to
= 0V
J
-V
-3
= 125
GS
Power Dissipation
Gate Charge Characteristics
7
3
, GATE TO SOURCE VOLTAGE(V)
Source Voltage
Single Pulse Maximum
o
10
t, PULSE WIDTH (s)
- Q
C
-2
g
, GATE CHARGE(nC)
14
10
6
-1
T
J
= 25
V
DD
10
T
V
o
DD
J
= -5V
C
0
21
9
= 25°C unless otherwise noted
= -15V
10
SINGLE PULSE
R
T
A
1
JA
=25
= 145
28
V
12
o
C
DD
10
2
o
= -10V
C/W
10
35
15
3
4
Figure 12. Transient Thermal Response Curve
3000
0.005
1000
0.01
0.01
100
0.1
30
10
0.1
60
1
2
1
0.1
0.1
10
-4
Figure 8.
r
V
SINGLE PULSE
R
T
D = 0.5
DUTY CYCLE-DESCENDING ORDER
f = 1MHz
V
DS(on)
Figure 10. Forward Bias Safe
A
GS
GS
JA
=
=4.5V
0.2
0.1
0.05
0.02
0.01
=
25
10
t, RECTANGULAR PULSE DURATION (s)
145
= 0V
LIMIT
V
-V
o
DS
-3
C
SINGLE PULSE
o
DS
to Source Voltage
C/W
, DRAIN to SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
Capacitance vs Drain
10
NOTES:
DUTY FACTOR: D = t
PEAK T
-2
1
10
1
J
= P
-1
DM
10
x Z
0
P
JA
DM
1
/t
x R
2
10
10
JA
1
t
www.fairchildsemi.com
1
+ T
t
2
C
A
C
C
10
10
iss
100ms
1s
10s
rss
100us
1ms
10ms
DC
oss
2
20
60
10
3