IRF7726TRPBF International Rectifier, IRF7726TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7726TRPBF
• Description: MOSFET P-CH 30V 7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7726TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 2204pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 26mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.79 W
• Gate Charge Qg: 46 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7726TRPBF; IRF7726TRPBFTR

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0.01
100
0.1
100
10
0.1
10
1
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
2.0
0.1
T = 150 C
J
-V
-V DS , Drain-to-Source Voltage (V)
GS
°
3.0
, Gate-to-Source Voltage (V)
T = 25 C
J
1
°
20µs PULSE WIDTH
Tj = 25°C
-2.5V
4.0
V
20µs PULSE WIDTH
DS
10
= -15V
5.0
TOP
BOTTOM -2.5V
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
6.0
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
-7.0A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
IRF7726PbF
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
-2.5V
10
TOP
BOTTOM -2.5V
V
GS
°
VGS
-10.0V
=
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-10V
100
3