STD20NF06LT4 STMicroelectronics, STD20NF06LT4 Datasheet - Page 4

• Manufacturer Part Number: STD20NF06LT4
• Description: MOSFET N-CH 60V 24A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD20NF06LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.032 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 18 V
• Continuous Drain Current: 24 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5888-2; STD20NF06LT4

Electrical characteristics
2
4/14
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 3.
Table 4.
1.
V
Symbol
Symbol
R
V
(BR)DSS
g
C
I
I
C
Pulsed: pulse duration = 300µs, duty cycle 1.5%
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss
iss
rss
gs
gd
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
GS
DS
= 0)
= 0)
I
V
V
V
V
V
V
V
V
V
V
(see Figure 12)
D
GS
GS
GS
DS
DS
DS
DS
DS
DD
GS
= 250µA, V
= V
= 10V, I
= 5V, I
=30V, I
= Max rating,
= Max rating,Tc = 125°C
= ±18V
=25V, I
=25V, f=1MHz, V
=10V
Test conditions
Test conditions
GS
, I
D
D
D
D
= 12A
D
= 12A
= 20A
= 12A
= 250µA
GS
= 0
GS
=0
STD20NF06L - STD20NF06L-1
Min.
Min.
60
1
0.032
Typ.
Typ.
660
170
3.5
20
70
13
8
0.040
0.050
Max.
Max.
±
2.5
100
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
V
Ω
Ω