SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4845DY-T1-E3
• Description: MOSFET P-CH 20V 2.7A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4845DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 312pF @ 10V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.21 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -27A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4845DY-T1-E3TR

Document Number: 73415
S-51110—Rev. B, 13-Jun-05
0.01
0.01
0.1
0.1
2
1
2
1
10
10
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Single Pulse
10
–3
Single Pulse
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
–3
Normalized Thermal Transient Impedance, Junction-to-Case
10
–2
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
New Product
–2
10
–1
1
10
–1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
A
1
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 120_C/W
Si4845DY
www.vishay.com
600
10
7