IRF7807VTRPBF International Rectifier, IRF7807VTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7807VTRPBF
• Description: MOSFET N-CH 30V 8.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7807VTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7807VPBFTR; IRF7807VTRPBF; IRF7807VTRPBFTR

IRF7807VPbF
Notes:
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current*
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Q
Output Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Diode Forward Voltage*
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottsky)
Electrical Characteristics
Source-Drain Ratings and Characteristics
2

‚
ƒ
„
…
†
*
Typical values of R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Q
measured at V
Device are 100% tested to these parameters.
Parameter
θ
Parameter
gs2
+ Q
GS
gd
)
= 5.0V, I
DS
oss
J
(on) measured at V
F
= 7.0A.
Symbol
Symbol
R
BV
V
Q
Q
Q
Q
Q
Q
t
t
I
I
V
DS(on)
GS(th)
Q
d(on)
d(off)
DSS
GSS
R
Q
OSS
GS1
GS2
t
t
rr(s)
GD
SW
SD
DSS
r
f
G
G
rr
GS
= 4.5V, Q
Min Typ Max Units
Min Typ Max Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.9
30
G
, Q
–––
–––
–––
–––
–––
––– ±100
–––
–––
SW
9.5
2.3
1.0
2.4
3.4
6.3
1.2
2.2
17
12
11
64
41
and Q
16.8
–––
100
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
5.2
2.8
1.2
25
20
14
OSS
mΩ
µA
nA
nC
nC
ns
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
Resistive Load
I
di/dt = 700A/µs
V
di/dt = 700A/µs , (with 10BQ040)
V
D
S
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
DD
GS
DS
DS
= 7.0A
= 7A
= 0V, I
= 4.5V, I
= V
= 30V, V
= 24V, V
= 24V, V
= ± 20V
= 5V, I
= 16V
= 16V, V
= 16V
= 5V, R
= 16V, V
= 16V, V
GS
d
, I
D
D
Conditions
Conditions
D
G
,V
= 250µA
= 7.0A
D
GS
GS
GS
GS
GS
GS
= 250µA
= 2Ω
GS
= 7.0A
= 0
= 0
= 0, T
= 0
= 0V, I
= 0V, I
= 0V
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J
d
S
S
= 100°C
= 7.0A
= 7.0A