STD38NH02LT4 STMicroelectronics, STD38NH02LT4 Datasheet

MOSFET N-CH 24V 38A DPAK

STD38NH02LT4

Manufacturer Part Number
STD38NH02LT4
Description
MOSFET N-CH 24V 38A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD38NH02LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1070pF @ 25V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3160-2

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
STD38NH02LT4
Manufacturer:
ST
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Part Number:
STD38NH02LT4
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD38NH02LT4(E)
Manufacturer:
ST
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Part Number:
STD38NH02LT4-D38NH02L
Manufacturer:
ST
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Part Number:
STD38NH02LT4-E
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ST
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Order codes
General features
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
July 2006
STD38NH02L-1
STD38NH02L
Logic level device
R
Conduction losses reduced
Switching losses reduced
Low threshold drive
Switching application
DS(ON)
Type
STD38NH02LT4
STD38NH02L-1
Part number
* Q
g
Industry’s benchmark
V
24V
24V
DSS
<0.0135Ω
<0.0135Ω
R
DS(on)
D38NH02L
D38NH02L
N-channel 24V - 0.011Ω - 38A - DPAK/IPAK
Marking
38A
38A
I
D
Rev 8
Internal schematic diagram
STripFET™ III Power MOSFET
Package
DPAK
IPAK
iPAK
STD38NH02L-1
1
2
3
STD38NH02L
Tape & reel
Packaging
DPAK
Tube
1
3
www.st.com
1/16
16

Related parts for STD38NH02LT4

STD38NH02LT4 Summary of contents

Page 1

... This is suitable fot the most demanding DC-DC converter application where high efficiency achieved. Applications ■ Switching application Order codes Part number STD38NH02L-1 STD38NH02LT4 July 2006 N-channel 24V - 0.011Ω - 38A - DPAK/IPAK STripFET™ III Power MOSFET R I DS(on) D <0.0135Ω 38A < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD38NH02L - STD38NH02L-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol (1) V Drain-source voltage rating spike V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD38NH02L - STD38NH02L-1 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/16 STD38NH02L - STD38NH02L-1 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

STD38NH02L - STD38NH02L-1 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/16 STD38NH02L - STD38NH02L-1 Figure 14. Gate charge test ...

Page 9

STD38NH02L - STD38NH02L-1 4 Appendix A Figure 19. Buck converter: power losses estimation The power losses associated with the FETs in a synchronous buck converter can be estimated using the equations shown in the table below. The formulas give a ...

Page 10

Appendix A Table 6. Power losses calculation Pconduction Pswitching Recovery (1) Pdiode Conductio n Pgate Qoss 1. Dissipated by SW1 during turn-on Table 7. Paramiters meaning Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P ...

Page 11

STD38NH02L - STD38NH02L-1 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 12

Package mechanical data DIM 12/16 TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 ...

Page 13

STD38NH02L - STD38NH02L-1 DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 ...

Page 14

Packing mechanical data 6 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 ...

Page 15

STD38NH02L - STD38NH02L-1 7 Revision history Table 8. Revision history Date 21-Jun-2004 11-Jul-2006 Revision 7 Preliminary version 8 New template, no content change Revision history Changes 15/16 ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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