FDMC5614P Fairchild Semiconductor, FDMC5614P Datasheet

MOSFET P-CH 60V 5.7A POWER33

FDMC5614P

Manufacturer Part Number
FDMC5614P
Description
MOSFET P-CH 60V 5.7A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC5614P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
1055pF @ 30V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.084 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13.5 A
Power Dissipation
2.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC5614PTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC5614P
Manufacturer:
Fairchild Semiconductor
Quantity:
87 677
Part Number:
FDMC5614P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC5614P
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Company:
Part Number:
FDMC5614P
Quantity:
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©2010 Fairchild Semiconductor Corporation
FDMC5614P Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMC5614P
P-Channel PowerTrench
-60V, -13.5A, 100mΩ
Features
V
V
I
P
T
R
R
D
DS
GS
D
J
θJC
θJA
Max r
Max r
Low gate charge
Fast switching speed
High performance trench technology for extremely low r
High power and current handling capability
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
5614P
= 100mΩ at V
= 135mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
FDMC5614P
= -10V, I
= -4.5V, I
-Continuous (Silicon limited)
-Pulsed
-Continuous
Device
MLP 3.3x3.3
D
D
= -5.7A
Pin 1
= -4.4A
T
A
= 25°C unless otherwise noted
Parameter
S
S
®
S
Power 33
DS(on)
Package
G
MOSFET
Bottom
1
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild
Semiconductor's advanced PowerTrench
optimized for power management applications requiring a wide
range of gate drive voltage ratings (4.5V-20V).
Application
D
T
T
T
T
T
Power management
Load switch
Battery protection
D
C
A
C
C
A
= 25°C
= 25°C
D
= 25°C
= 25°C
= 25°C
D
Reel Size
7’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
7
5
6
8
Tape Width
8mm
-55 to +150
Ratings
-13.5
±20
-5.7
-60
-14
-23
2.1
3.0
42
60
®
September 2010
process. It has been
www.fairchildsemi.com
3000 units
Quantity
4
3
1
2
G
S
S
S
Units
°C/W
°C
W
V
V
A
tm

Related parts for FDMC5614P

FDMC5614P Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 5614P FDMC5614P ©2010 Fairchild Semiconductor Corporation FDMC5614P Rev.C1 ® MOSFET General Description = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild D Semiconductor's advanced PowerTrench = -4.4A D optimized for power management applications requiring a wide range of gate drive voltage ratings (4 ...

Page 2

... PCB. θJA (b)R = 135°C/W when mounted on a minimum pad copper. θJA 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMC5614P Rev. 25°C unless otherwise noted J Test Conditions I = -250μA, V ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On- Resistance vs Junction Temperature 30 PULSE DURATION = 300 DUTY CYCLE = 2.0%MAX - 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC5614P Rev. 25°C unless otherwise noted -4. -3. -3. μ 100 125 150 μ 1E-4 ...

Page 4

... T = 125 0.01 0 TIME IN AVALANCHE(ms) AV Figure 9. Unclamped Inductive Switching Capability 1000 V = -10V GS 100 10 SINGLE PULSE 135 C θ 0 Figure 11. FDMC5614P Rev. 25°C unless otherwise noted J 2000 1000 = -20V -30V -40V 0.01 1E 100 - PULSE WIDTH (s) Single Pulse Maximum Power Dissipation 4 C iss 100 C oss ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE R 1E-3 0.0005 - FDMC5614P Rev. 25°C unless otherwise noted 135 C/W JA θ RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 6

... Dimensional Outline and Pad Layout FDMC5614P Rev.C1 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC5614P Rev.C1 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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