IRF7805ZGTRPBF International Rectifier, IRF7805ZGTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7805ZGTRPBF
• Description: MOSFET N-CH 30V 16A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7805ZGTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2050pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 5.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.25V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7805ZGTRPBFTR

4
1000.0
10000
100.0
1000
10.0
100
1.0
0.1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 150°C
0.4
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
Coss
Crss
Ciss
0.8
T J = 25°C
f = 1 MHZ
10
1.0
V GS = 0V
1.2
100
1000
100
0.1
Fig 8. Maximum Safe Operating Area
12
10
10
8
6
4
2
0
1
1.0
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 12A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
VDS= 15V
10.0
20
www.irf.com
30
100µsec
1msec
10msec
100.0
40