STD3NK50ZT4 STMicroelectronics, STD3NK50ZT4 Datasheet

MOSFET N-CH 500V 2.3A DPAK

STD3NK50ZT4

Manufacturer Part Number
STD3NK50ZT4
Description
MOSFET N-CH 500V 2.3A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD3NK50ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 Ohm @ 1.15A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohms
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.3 A
Power Dissipation
45 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-4333-2

Available stocks

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Manufacturer:
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January 2005
Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme opyimization of ST’s well established strip
based PowerMESH™ layout. In addition to push-
ing on-resistance significatly down, special care is
taken to ensure a very good dv/dt capability for the
most demanding application. Such series comple-
ments ST full range of high voltage MOSFETs
icluding revolutionary MDmesh™ products
APPLICATIONS
Table 2: Order Coder
STQ3NK50ZR-AP
STD3NK50Z
STD3NK50Z-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY)
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
LIGHTING
STQ3NK50ZR-AP
STD3NK50Z-1
SALES TYPE
TYPE
STD3NK50Z
DS
(on) = 2.8
N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAK
500 V
500 V
500 V
V
DSS
R
3.3
3.3
3.3
DS(on)
Q3NK50ZR
MARKING
D3NK50Z
D3NK50Z
Zener-Protected SuperMESH™ MOSFET
0.5 A
2.3 A
2.3 A
I
D
STD3NK50Z - STD3NK50Z-1
45 W
45 W
3 W
Pw
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-92 (Ammopak)
TO-92
DPAK
IPAK
STQ3NK50ZR-AP
IPAK
TAPE & REEL
PACKAGING
AMMOPAK
1
2
TUBE
Rev. 2
3
DPAK
1
3
1/14

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STD3NK50ZT4 Summary of contents

Page 1

N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAK Table 1: General Features TYPE V DSS STQ3NK50ZR-AP 500 V STD3NK50Z 500 V STD3NK50Z-1 500 V TYPICAL R (on) = 2.8 DS EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY) 100% AVALANCHE TESTED NEW ...

Page 2

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous ...

Page 3

ELECTRICAL CHARACTERISTICS (T Table 7: On/Off Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static Drain-source On ...

Page 4

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 3: Safe Operating Area For TO-92 Figure 4: Safe Operating Area For DPAK / IPAK Figure 5: Output Characteristics 4/14 Figure 6: Thermal Impedance TO-92 Figure 7: Thermal Impedance For DPAK / IPAK Figure ...

Page 5

Figure 9: Transconductance Figure 10: Gate Charge vs Gate-source Voltage Figure 11: Static Drain-Source On Resistance STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 12: Capacitance Variations Figure 13: Normalized Gate Threshold Voltage vs Temperature Figure 14: Source-Drain Forward Characteris- tics 5/14 ...

Page 6

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 15: Maximum Avalanche Energy vs Temperature Figure 16: Normalized On Resistance vs Tem- perature 6/14 Figure 17: Normalized BV DSS vs Temperature ...

Page 7

Figure 18: Unclamped Inductive Load Test Cir- cuit Figure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Figure 21: Unclamped Inductive Wafeform Figure ...

Page 8

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 8/14 TO-252 (DPAK) MECHANICAL DATA mm ...

Page 9

TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 0.8 ...

Page 10

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP DIM. MIN. A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 0.92 W 0.41 V 10/14 TO-92 MECHANICAL DATA mm. TYP MAX. MIN. 4.95 0.170 0.51 0.014 ...

Page 11

DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 ...

Page 12

STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP DIM. MIN. A1 4. 0.41 P0 12.5 P2 5.65 F1, F2 2.44 delta 17.5 W0 5 18 3.8 t ...

Page 13

Table 10: Revision History Date Revision 09-Jul-2004 1 17-Jan-2005 2 STD3NK50Z - STD3NK50Z-1 - STQ3NK50ZR-AP Description of Changes First Release. Complete Version 13/14 ...

Page 14

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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