ATP213-TL-H SANYO, ATP213-TL-H Datasheet
ATP213-TL-H
Specifications of ATP213-TL-H
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ATP213-TL-H Summary of contents
Page 1
... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP213 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... Switching Time Test Circuit =30V 10V =25A =1.2Ω D PW=10μs D.C.≤1% G ATP213 P.G 50Ω S ATP213 Symbol Conditions V GS (off =10V =1mA | yfs | V DS =10V =25A R DS (on =25A =10V R DS (on =13A =4. (on =7A =4V Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz ...
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... Gate-to-Source Voltage 100 V DS =10V 7 Single pulse 1 0.1 1.0 10 Drain Current Time -- =30V =10V 3 2 100 0.1 1.0 10 Drain Current ATP213 =10V 70 Single pulse 1.6 1.8 2.0 0 0.5 IT14837 35 Tc=25 ° C Single pulse --50 --25 IT14839 100 =0V 5 Single pulse 1.0 ...
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... Case Temperature °C Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...