STB55NF06LT4 STMicroelectronics, STB55NF06LT4 Datasheet - Page 7
![MOSFET N-CH 60V 55A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
STB55NF06LT4
Manufacturer Part Number
STB55NF06LT4
Description
MOSFET N-CH 60V 55A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB55NF06LT4.pdf
(15 pages)
Specifications of STB55NF06LT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
4.7V @ 250µA
Gate Charge (qg) @ Vgs
37nC @ 4.5V
Input Capacitance (ciss) @ Vds
1700pF @ 25V
Power - Max
95W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
55 A
Power Dissipation
95000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
55A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7462-2
STB55NF06LT4
STB55NF06LT4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB55NF06LT4
Manufacturer:
ST
Quantity:
12 500
STB55NF06L - STB55NF06L-1 - STP55NF06L
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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