DI9430T Diodes Zetex, DI9430T Datasheet

DI9430T

Manufacturer Part Number

DI9430T

Description

MOSFET P-CH 20V 5.3A 8-SOP

Manufacturer

Diodes Zetex

Datasheet

1.DI9430T.pdf (4 pages)

Specifications of DI9430T

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

60 mOhm @ 5.3A, 10V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

5.3A

Vgs(th) (max) @ Id

3V @ 25µA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

1430pF @ 10V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-SOP

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

DI9430TR

Current page: 1 of 4
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Features

Mechanical Data

Maximum Ratings

Thermal Characteristics

Notes:

DS11505 Rev. E-4

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SO-8 Plastic Case

Terminal Connections: See Outline Drawing

and Internal Circuit Diagram above

High Cell Density DMOS Technology

Low On-State Resistance

High Power and Current Capability

Fast Switching Speed

High Transient Tolerance

1. R

is defined as the solder mounting surface of the drain pins. R

circuit board thermal design.

1a. With 1 in

1b. With 0.04 in

1c. With 0.006 in

QJA

is the sum of the junction-to-case and case-to-ambient thermal resistance (R

Characteristic

Note 1a Continuous @ T

of 2 oz. copper mounting pad R

25°C unless otherwise specified

of 2 oz. copper mounting pad R

Pulsed @ T

Note 1a

Note 1b

Note 1a

= 25°C

Note 1c

= 25°C

= 70°C

Note 1

QJA = 50°C\W.

QJA = 105°C\W.

QJA = 125°C\W.

VIEW

1 of 4

TOP

SINGLE P-CHANNEL ENHANCEMENT MODE

QJC in this instance is 25°C/W

Symbol

, T

DSS

GSS

QJC

QJA

STG

QJC

but is dependent on the specific

FIELD EFFECT TRANSISTOR

-55 to +150

+ R

Value

±5.3

±4.2

±20

±15

2.5

-20

1.2

1.0

QCA

) where the case thermal reference

All Dimensions in mm

Dim

DI9430

°C/W

0.939 Nominal

0.381

0.527

0.025

Unit

SO-8

Unit

0.41 Nominal

3.94

3.20

2.67

0.89

4.37

4.39

Min

0.94

°C

DI9430

0.495

0.679

0.152

Max

4.19

3.40

3.05

1.02

1.09

4.62

4.70

Related parts for DI9430T

DI9430T Summary of contents

Page 1

Features · High Cell Density DMOS Technology · Low On-State Resistance · High Power and Current Capability · Fast Switching Speed · High Transient Tolerance Mechanical Data · SO-8 Plastic Case · Terminal Connections: See Outline Drawing and Internal Circuit ...

Page 2

Electrical Characteristics 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current T = 55°C j Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage T = 125°C j Static Drain-Source ...

Page 3

-6.0 -5.0 -4.5 -15 - DRAIN-SOURCE VOLTAGE (V) DS Fig. 1, On-Region Characteristics 1.4 1.2 1.0 ...

Page 4

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 Remark: Thermal characterization performed under conditions of Note 1c. Better thermal design such as shown in Notes 1a and 1b ...

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