DI9435T Diodes Zetex, DI9435T Datasheet - Page 4

• Manufacturer Part Number: DI9435T
• Description: MOSFET P-CH 30V 5.3A 8-SOP
• Manufacturer: Diodes Zetex

Specifications of DI9435T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DS11503 Rev. F-4
0.001
0.01
1.0
0.1
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
Remark: Thermal characterization performed under conditions of Note
1c. Better thermal design such as shown in Notes 1a and 1b or 1d will
offer lower R
sooner.
0.01
1.0
0.1
10
30
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
0.1
0.01
QJA
t , SQUARE WAVE PULSE DURATION (seconds)
V
Single Pulse
R
T = 25 C
1
GS
A
QJA
values and allow junction to reach thermal equilibrium
Fig. 5, Maximum Safe Operating Area
= -10 V
-V , DRAIN-SOURCE VOLTAGE (V)
= See Note 1c
DS
4 of 4
1.0
0.1
1.0
10
50
P
10
(pk)
R
R
QJA
QJA
T - T = P
Duty Cycle, D = t /t
J
(t) = r(t) b R
= See Note 1c
t
1
A
t
2
PK
b R
QJA
1 2
QJA
100
(t)
DI9435
300