STD95N04 STMicroelectronics, STD95N04 Datasheet - Page 5

• Manufacturer Part Number: STD95N04
• Description: MOSFET N-CH 40V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD95N04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5106-2

STD95N04 - STP95N04
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
d(on)
d(off)
SD
RRM
I
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Falltime
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Source drain diode
Parameter
Parameter
V
R
(see Figure 15)
V
R
(see Figure 15)
I
I
di/dt = 100A/µs,
V
(see Figure 14)
SD
SD
DD
DD
G
G
DD
=4.7Ω, V
=4.7Ω, V
=80A, V
=80A,
=20V, I
=20V, I
Test conditions
Test conditions
=30V, Tj=150°C
D
D
GS
= 40A,
= 40A,
GS
GS
=0
=10V
=10V
Electrical characteristics
Min.
Min.
Typ.
Typ.
15
50
40
15
2.8
45
60
Max.
Max.
320
1.5
80
Unit
Unit
nC
ns
ns
ns
ns
ns
5/14
A
A
V
A