ATP104-TL-H SANYO, ATP104-TL-H Datasheet - Page 4
![MOSFET P-CH 30V 75A ATPAK](/photos/5/52/55290/atp108-tl-h_sml.jpg)
ATP104-TL-H
Manufacturer Part Number
ATP104-TL-H
Description
MOSFET P-CH 30V 75A ATPAK
Manufacturer
SANYO
Datasheet
1.ATP104-TL-H.pdf
(4 pages)
Specifications of ATP104-TL-H
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.4 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
75A
Gate Charge (qg) @ Vgs
76nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
ATPAK (2 leads+tab)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
6.4mohm
Rds(on) Test Voltage Vgs
-10V
Voltage Vgs Max
20V
Transistor Case Style
ATPAK
No. Of Pins
3
Current Id
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1074-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATP104-TL-H
Manufacturer:
ON Semiconductor
Quantity:
1 050
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
70
60
50
40
30
20
10
0
0
0
0
Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of February, 2009. Specifi cations and information herein are subject
to change without notice.
V DS = --15V
I D = --75A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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mentioned above.
10
20
20
40
Total Gate Charge, Qg -- nC
Case Temperature, Tc -- °C
of highly charged objects.
30
60
V GS -- Qg
P D -- Tc
40
80
100
50
120
60
140
70
IT14396
IT14398
160
80
ATP104
--100
--1.0
--0.1
--10
120
100
80
60
40
20
--0.1
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
I D = --75A
Tc=25°C
Single pulse
I DP = --225A
Operation in
this area is
limited by R DS (on).
2
25
3
Drain-to-Source Voltage, V DS -- V
Ambient Temperature, Ta -- °C
5
50
7
--1.0
E AS -- Ta
75
A S O
2
3
100
5
7
125
PW≤10μs
--10
PS
No. A1406-4/4
150
2
IT14397
IT10478
3
175
5