ATP104-TL-H SANYO, ATP104-TL-H Datasheet - Page 4

• Manufacturer Part Number: ATP104-TL-H
• Description: MOSFET P-CH 30V 75A ATPAK
• Manufacturer: SANYO

Specifications of ATP104-TL-H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.4 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 75A
• Gate Charge (qg) @ Vgs: 76nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 10V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: ATPAK (2 leads+tab)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 6.4mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 20V
• Transistor Case Style: ATPAK
• No. Of Pins: 3
• Current Id: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 869-1074-2

--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
70
60
50
40
30
20
10
0
0
0
0
Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of February, 2009. Specifi cations and information herein are subject
to change without notice.
V DS = --15V
I D = --75A
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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mentioned above.
10
20
20
40
Total Gate Charge, Qg -- nC
Case Temperature, Tc -- °C
of highly charged objects.
30
60
V GS -- Qg
P D -- Tc
40
80
100
50
120
60
140
70
IT14396
IT14398
160
80
ATP104
--100
--1.0
--0.1
--10
120
100
80
60
40
20
--0.1
0
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
I D = --75A
Tc=25°C
Single pulse
I DP = --225A
Operation in
this area is
limited by R DS (on).
2
25
3
Drain-to-Source Voltage, V DS -- V
Ambient Temperature, Ta -- °C
5
50
7
--1.0
E AS -- Ta
75
A S O
2
3
100
5
7
125
PW≤10μs
--10
PS
No. A1406-4/4
150
2
IT14397
IT10478
3
175
5