SI4483EDY-T1-E3 Vishay, SI4483EDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4483EDY-T1-E3
• Description: MOSFET P-CH 30V 10A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4483EDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 25V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI4483EDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
0.020
0.016
0.012
0.008
0.004
0.000
0.1
50
40
30
20
10
50
10
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
0.2
On-Resistance vs. Drain Current
V
10
1
V
GS
V
SD
DS
Output Characteristics
= 10 thru 4 V
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
0.4
T
I
D
J
- Drain Current (A)
= 150 °C
20
2
V
V
GS
0.6
GS
= 4.5 V
= 10 V
30
3
T
0.8
3 V
J
= 25 °C
40
4
1.0
1.2
50
5
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
- 50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
- 25
0.5
= 14 A
2
V
V
GS
Transfer Characteristics
T
GS
0
1.0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
4
1.5
T
25 °C
C
50
Vishay Siliconix
= 125 °C
2.0
Si4483EDY
6
75
2.5
www.vishay.com
100
- 55 °C
8
3.0
125
150
3.5
10
3